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GB/T 29332-2012 in English
Semiconductor devices—Discrete devices—Part 9:Insulated-gate bipolar transistors (IGBT)
valid
Issued on:2012-12-31
$1,200.00 -
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SJ 50033/163-2003 in English
Semiconductor discrete device Detail specification of type 3DK457 for power switching transistors
valid
Issued on:2003-12-15
$240.00 -
SJ/T 11225-2000 in English
Detail specification for electronic components Type 3DA504 S band silicon pulse power transistor
valid
Issued on:2000-08-16
$240.00