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GB/T 1558-2023 in English
Test method for substitutional carbon content in silicon by infrared absorption
to be valid
Issued on:2023-12-28
$308.00 -
GB/T 43315-2023 in English
Test method for flow pattern defects in silicon wafer—Etching technique
valid
Issued on:2023-11-27
$364.00 -
GB/T 42676-2023 in English
Test method for crystalline quality of semiconductive single crystal―X-ray diffraction method
valid
Issued on:2023-08-06
$308.00 -
GB/T 42902-2023 in English
Test method for surface defects on silicon carbide epitaxial wafers―Laser scattering method
valid
Issued on:2023-08-06
$476.00 -
GB/T 42905-2023 in English
Test method for thickness of silicon carbide epitaxial layer―Infrared reflectance method
valid
Issued on:2023-08-06
$308.00